A semiconductor device comprising a semiconductor substrate, a switching element which is provided on the semiconductor substrate, a first interconnect layer which is provided above the semiconductor substrate, a plurality of phase-change memory devices which have phase-change material whose resistance changes by a phase-change due to a temperature change, being stacked, and being connected in series to the first interconnect layer and the switching element, a plurality of first heating elements which are connected in series to the respective phase-change memory devices, and a plurality of second heating elements which are connected to second interconnect layers different from the first interconnect layer, and which are provided so as to correspond to the respective phase-change memory devices.