Transistors and methods of fabricating transistors are disclosed. A disclosed method comprises forming an inversion epitaxial layer on a silicon substrate; forming a hard mask on the inversion epitaxial layer; depositing a silicon epitaxial layer over the inversion epitaxial layer; forming a trench through the silicon epitaxial layer by removing the hard mask; forming reverse spacers on the sidewalls of the trench by filling the trench with an insulating layer and etching the insulating layer; forming a gate electrode over the reverse spacers; forming pocket-well regions and LDD regions in the silicon substrate by performing ion implantations; forming spacers on the sidewalls of the gate electrode; forming source and drain regions in the silicon substrate by performing an ion implantation; and forming a silicide layer on the gate electrode and the source and drain regions.