A semiconductor device is formed having two physically separate regions with differing properties such as different surface orientation, crystal rotation, strain or composition. In one form a first layer having a first property is formed on an insulating layer. The first layer is isolated into first and second physically separate areas. After this physical separation, only the first area is amorphized. A donor wafer is placed in contact with the first and second areas. The semiconductor device is annealed to modify the first of the first and second separate areas to have a different property from the second of the first and second separate areas. The donor wafer is removed and at least one semiconductor structure is formed in each of the first and second physically separate areas. In another form, the separate regions are a bulk substrate and an electrically isolated region within the bulk substrate.