发明申请
- 专利标题： ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS
- 专利标题（中）： 原子层沉积障碍物
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申请号： US11691617申请日： 2007-03-27
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公开(公告)号： US20070190780A1公开(公告)日： 2007-08-16
- 发明人: HUA CHUNG , Rongjun Wang , Nirmalya Maity
- 申请人： HUA CHUNG , Rongjun Wang , Nirmalya Maity
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
公开/授权文献
- US07595263B2 Atomic layer deposition of barrier materials 公开/授权日：2009-09-29
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