发明申请
- 专利标题： LOW-K DIELECTRIC LAYERS FOR LARGE SUBSTRATES
- 专利标题（中）： 用于大型衬底的低K电介质层
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申请号： US11558217申请日： 2006-11-09
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公开(公告)号： US20070190808A1公开(公告)日： 2007-08-16
- 发明人: Michael W. Stowell , Jose M. Dieguez-Campo , Michael Liehr
- 申请人： Michael W. Stowell , Jose M. Dieguez-Campo , Michael Liehr
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A system and method for producing a film is described. One embodiment of the process includes the following processes: providing a substrate comprising a glass plate, electrodes; and bus bars; heating the substrate to an approximate critical temperature; initiating the chemical vapor deposition process when the substrate is near the approximate critical temperature, thereby depositing a film on the substrate; maintaining the upper portion of the film at approximately the critical temperature while the chemical vapor deposition process is ongoing; terminating the chemical vapor deposition process once the film has reached a desired thickness; and cooling the substrate and the deposited film.
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