发明申请
- 专利标题： Magnetic memory devices using magnetic domain dragging
- 专利标题（中）： 使用磁畴拖曳的磁存储器件
-
申请号： US11505969申请日： 2006-08-18
-
公开(公告)号： US20070194359A1公开(公告)日： 2007-08-23
- 发明人: Chee-Kheng Lim , Eun-sik Kim , Yong-su Kim
- 申请人： Chee-Kheng Lim , Eun-sik Kim , Yong-su Kim
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2006-0017876 20060223
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.
公开/授权文献
- US07902579B2 Magnetic memory devices using magnetic domain dragging 公开/授权日：2011-03-08
信息查询
IPC分类:
