• 专利标题: Dynamic semiconductor memory with improved refresh mechanism
  • 申请号: US11378183
    申请日: 2006-03-16
  • 公开(公告)号: US20070195627A1
    公开(公告)日: 2007-08-23
  • 发明人: Yongki Kim
  • 申请人: Yongki Kim
  • 申请人地址: KR Ichon-si
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Ichon-si
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Dynamic semiconductor memory with improved refresh mechanism
摘要:
Various embodiments for implementing refresh mechanisms in dynamic semiconductor memories that allow simultaneous read/write and refresh operations. In one embodiment, the invention provides a synchronous multi-bank dynamic memory circuit that employs a flag to indicate a refresh mode of operation wherein refresh operation can occur in the same bank at the same time as normal access for read/write operation. In a specific embodiment, to resolve conflicts between addresses, an address comparator compares the address for normal access to the address for refresh operation. In case of a match between the two addresses, the invention cancels the refresh operation at that array and allows the normal access to proceed.
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