发明申请
US20070195849A1 Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
失效
具有改进的衍射光栅的增益耦合分布反馈半导体激光器
- 专利标题: Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
- 专利标题(中): 具有改进的衍射光栅的增益耦合分布反馈半导体激光器
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申请号: US11475136申请日: 2006-06-27
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公开(公告)号: US20070195849A1公开(公告)日: 2007-08-23
- 发明人: Kazuhisa Takagi , Keisuke Matsumoto
- 申请人: Kazuhisa Takagi , Keisuke Matsumoto
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-045726 20060222
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S3/13
摘要:
In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semiconductor laser has a structure in which an absorption diffraction grating is located along an optical waveguide, and the diffraction grating includes a phase shift region.
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