发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11712373申请日： 2007-03-01
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公开(公告)号： US20070196956A1公开(公告)日： 2007-08-23
- 发明人: Takashi Imoto , Chiaki Takubo , Ryuji Hosokawa , Yoshihisa Imori , Takao Sato , Tetsuya Kurosawa , Mika Kiritani
- 申请人： Takashi Imoto , Chiaki Takubo , Ryuji Hosokawa , Yoshihisa Imori , Takao Sato , Tetsuya Kurosawa , Mika Kiritani
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP2004-089476 20040325
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/302
摘要：
A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.
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