发明申请
US20070196991A1 SEMICONDUCTOR DEVICE HAVING A STRAIN INDUCING SIDEWALL SPACER AND A METHOD OF MANUFACTURE THEREFOR
审中-公开
具有感应平台间隙的应变的半导体器件及其制造方法
- 专利标题： SEMICONDUCTOR DEVICE HAVING A STRAIN INDUCING SIDEWALL SPACER AND A METHOD OF MANUFACTURE THEREFOR
- 专利标题（中）： 具有感应平台间隙的应变的半导体器件及其制造方法
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申请号： US11610908申请日： 2006-12-14
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公开(公告)号： US20070196991A1公开(公告)日： 2007-08-23
- 发明人: Mahalingam Nandakumar , Wayne Bather , Narendra Mehta , Lahir Adam
- 申请人： Mahalingam Nandakumar , Wayne Bather , Narendra Mehta , Lahir Adam
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure over a substrate, and forming a strain inducing sidewall spacer proximate a sidewall of the gate structure, the strain inducing sidewall configured to introduce strain in a channel region below the gate structure.
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