发明申请
US20070200748A1 Semiconductor Device for an Ultra Wideband Standard for Ultra-High-Frequency Communication, and Method for Producing the Same 有权
用于超高频通信的超宽带标准的半导体器件及其制造方法

  • 专利标题: Semiconductor Device for an Ultra Wideband Standard for Ultra-High-Frequency Communication, and Method for Producing the Same
  • 专利标题(中): 用于超高频通信的超宽带标准的半导体器件及其制造方法
  • 申请号: US11675342
    申请日: 2007-02-15
  • 公开(公告)号: US20070200748A1
    公开(公告)日: 2007-08-30
  • 发明人: Juergen HoegerlThomas Killer
  • 申请人: Juergen HoegerlThomas Killer
  • 申请人地址: DE Munich
  • 专利权人: INFINEON TECHNOLOGIES AG
  • 当前专利权人: INFINEON TECHNOLOGIES AG
  • 当前专利权人地址: DE Munich
  • 优先权: DE102006007381.9 20060215
  • 主分类号: G01S13/00
  • IPC分类号: G01S13/00
Semiconductor Device for an Ultra Wideband Standard for Ultra-High-Frequency Communication, and Method for Producing the Same
摘要:
A semiconductor device for an ultra-wideband standard for ultra-high-frequency communication includes an ultra-wideband semiconductor chip and a multilayer circuit substrate with at least one lower metal layer and one upper metal layer, in which an ultra-wideband circuit with passive devices is arranged. The lower metal layer has external contact pads on which external contacts are arranged, via which the semiconductor device can be surface-mounted on a circuit board. In addition, the semiconductor device has an antenna which is operatively coupled to the ultra-wideband semiconductor chip via the circuit on the circuit substrate and is arranged above the semiconductor chip and the circuit substrate.
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