Invention Application
US20070202446A1 Semiconductor device fabrication method having step of removing photo-resist film or the like, and photo-resist film removal device
审中-公开
具有去除光致抗蚀剂膜等的步骤的半导体器件制造方法和光致抗蚀剂膜去除装置
- Patent Title: Semiconductor device fabrication method having step of removing photo-resist film or the like, and photo-resist film removal device
- Patent Title (中): 具有去除光致抗蚀剂膜等的步骤的半导体器件制造方法和光致抗蚀剂膜去除装置
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Application No.: US11445325Application Date: 2006-06-02
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Publication No.: US20070202446A1Publication Date: 2007-08-30
- Inventor: Osamu Takahashi , Tetsuo Yaegashi
- Applicant: Osamu Takahashi , Tetsuo Yaegashi
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Priority: JP2006-052576 20060228
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
In the step of removing the photo-resist film formed on a substrate, dry ice particles, with a predetermined particle size, are blasted onto the photo-resist film at a predetermined pressure in a state of heating the substrate at room temperature or higher, such as 30 to 200° C., preferably at about 100° C.
Information query
IPC分类:
