发明申请
- 专利标题： Contact formation
- 专利标题（中）： 接触层
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申请号： US11363661申请日： 2006-02-27
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公开(公告)号： US20070202677A1公开(公告)日： 2007-08-30
- 发明人: James Mathew , H. Manning
- 申请人： James Mathew , H. Manning
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present disclosure includes various method, circuit, device, and system embodiments. One such method embodiment includes creating a trench in an insulator stack material having a portion of the trench positioned between two of a number of gates and depositing a spacer material to at least one side surface of the trench. This method also includes depositing a conductive material into the trench and depositing a cap material into the trench.
公开/授权文献
- US3097093A Copper base alloys 公开/授权日：1963-07-09