发明申请
- 专利标题： InN/TiO2 photosensitized electrode
- 专利标题（中）： InN / TiO2光敏电极
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申请号： US11494597申请日： 2006-07-28
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公开(公告)号： US20070207561A1公开(公告)日： 2007-09-06
- 发明人: Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Yuan-Pern Lee , Wei-Guang Diau , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- 申请人： Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Yuan-Pern Lee , Wei-Guang Diau , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- 申请人地址： TW Taoyuan
- 专利权人： ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- 当前专利权人： ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- 当前专利权人地址： TW Taoyuan
- 优先权： TW095107066 20060302
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
公开/授权文献
- US07622397B2 InN/TiO2 photosensitized electrode 公开/授权日：2009-11-24
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