Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a compound. The compound includes a first substance and a second substance. The second electrode includes a trace amount of the first substance. The morphology of the semiconductor structure remains stable when the trace amount of the first substance is oxidized during crystallization of the dielectric. In one embodiment, the crystalline structure of the dielectric describes substantially a (001) lattice plane.