Invention Application
US20070210858A1 CIRCUIT AND METHOD FOR FAST SWITCHING OF A CURRENT MIRROR WITH LARGE MOSFET SIZE
有权
具有大型MOSFET尺寸的电流镜的快速切换的电路和方法
- Patent Title: CIRCUIT AND METHOD FOR FAST SWITCHING OF A CURRENT MIRROR WITH LARGE MOSFET SIZE
- Patent Title (中): 具有大型MOSFET尺寸的电流镜的快速切换的电路和方法
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Application No.: US11679364Application Date: 2007-02-27
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Publication No.: US20070210858A1Publication Date: 2007-09-13
- Inventor: Justin Ang
- Applicant: Justin Ang
- Applicant Address: SG Singapore
- Assignee: STMICROELECTRONICS ASIA PACIFIC PTE, LTD.
- Current Assignee: STMICROELECTRONICS ASIA PACIFIC PTE, LTD.
- Current Assignee Address: SG Singapore
- Priority: SG200601485-6 20060307
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
The present invention discloses a fast switching current mirror circuit and method for generating fast switching current. The circuit and method for fast switching of a current mirror with large MOSFET size will save space and current consumption.
Public/Granted literature
- US08786360B2 Circuit and method for fast switching of a current mirror with large MOSFET size Public/Granted day:2014-07-22
Information query
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