发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11797984申请日: 2007-05-09
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公开(公告)号: US20070211547A1公开(公告)日: 2007-09-13
- 发明人: Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
- 申请人: Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
- 优先权: JP11-042666 19990222
- 主分类号: G11C7/06
- IPC分类号: G11C7/06
摘要:
A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
公开/授权文献
- US07345938B2 Semiconductor device 公开/授权日:2008-03-18
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