Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same

Invention Application

US20070212827A1 Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same 有权

Title translation: 形成硅层的方法和使用其形成显示器基板的方法

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Patent Title: Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same
Patent Title (中): 形成硅层的方法和使用其形成显示器基板的方法
Application No.: US11675935

Application Date: 2007-02-16
Publication No.: US20070212827A1

Publication Date: 2007-09-13
Inventor: Kunal Girotra , Byoung-June Kim , Sung-Hoon Yang
Applicant: Kunal Girotra , Byoung-June Kim , Sung-Hoon Yang
Priority: KR2006-15517 20060217
Main IPC: H01L21/84
IPC: H01L21/84

Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same

Abstract:

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF4) gas, a nitrogen trifluoride (NF3) gas, SiF4—H2 gas and a mixture thereof Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrfluoride (SiF4), hydrogen (H2) and argon (Ar),

Abstract(Chinese):

一种制造硅层的方法包括：使用第一反应气体，通过等离子体增强化学气相沉积方法来预处理在衬底上形成的氮化硅层的表面，所述第一反应气体包括四氟化硅（SiF 4 N 4 O 4））气体，三氟化氮（NF 3 3）气体，SiF 4 H 2 H 2气体及其混合物然后，形成硅层通过等离子体增强化学气相沉积方法在预处理的氮化硅层上，使用包括包括四氟化硅（SiF 4 N 4），氢（H 2 O 3）的气体混合物的第二反应气体，）和氩（Ar），

Public/Granted literature

US07696091B2 Method of forming a silicon layer and method of manufacturing a display substrate by using the same Public/Granted day:2010-04-13

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体