发明申请
- 专利标题： Structure and method for a sidewall SONOS memory device
- 专利标题（中）： 侧壁SONOS存储器件的结构和方法
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申请号： US11602809申请日： 2006-11-21
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公开(公告)号： US20070212841A1公开(公告)日： 2007-09-13
- 发明人: Tzyh-Cheang Lee , Fu-Liang Yang , Jiunn-Ren Hwang , Tsung-Lin Lee
- 申请人： Tzyh-Cheang Lee , Fu-Liang Yang , Jiunn-Ren Hwang , Tsung-Lin Lee
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A gate stack is formed on a substrate. The gate stack has a sidewall. An oxide-nitride-oxide material is deposited on the gate stack. Portions of the oxide-nitride-oxide material are removed to form an oxide-nitride-oxide structure. The oxide-nitride-oxide structure has a generally L-shaped cross-section with a vertical portion along at least part of the gate stack sidewall and a horizontal portion along the substrate. A top oxide material is deposited over the substrate. A silicon nitride spacer material is deposited over the top oxide material. Portions of the top oxide material and the silicon nitride spacer material are removed to form a silicon nitride spacer separated from the oxide-nitride-oxide stack by the top oxide material. Source/drain regions are formed in the substrate.
公开/授权文献
- US07482236B2 Structure and method for a sidewall SONOS memory device 公开/授权日：2009-01-27