发明申请
- 专利标题： Resistance random access memory device and a method of manufacturing the same
- 专利标题（中）： 电阻随机存取存储器件及其制造方法
-
申请号： US11654003申请日： 2007-01-17
-
公开(公告)号： US20070215977A1公开(公告)日： 2007-09-20
- 发明人: Myoung-jae Lee , Yoon-dong Park , Hyun-sang Hwang , Dong-soo Lee
- 申请人： Myoung-jae Lee , Yoon-dong Park , Hyun-sang Hwang , Dong-soo Lee
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2006-0022728 20060310
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; G11C11/00
摘要：
Provided is a resistance random access memory (RRAM) device and a method of manufacturing the same. A resistance random access memory (RRAM) device may include a lower electrode, a first oxide layer on the lower electrode and storing information using two resistance states, a current control layer made of a second oxide on the first oxide layer and an upper electrode on the current control layer.