Semiconductor package with enhancing layer and method for manufacturing the same

发明申请

US20070216003A1 Semiconductor package with enhancing layer and method for manufacturing the same 审中-公开

标题翻译：具有增强层的半导体封装及其制造方法

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专利标题： Semiconductor package with enhancing layer and method for manufacturing the same
专利标题（中）： 具有增强层的半导体封装及其制造方法
申请号： US11656427

申请日： 2007-01-23
公开(公告)号： US20070216003A1

公开(公告)日： 2007-09-20
发明人: Hui-Pin Chen , Chia-Chieh Hu
申请人： Hui-Pin Chen , Chia-Chieh Hu
专利权人： Advanced Semiconductor Engineering. Inc.
当前专利权人： Advanced Semiconductor Engineering. Inc.
优先权： TW95108840 20060315
主分类号： H01L23/02
IPC分类号： H01L23/02

Semiconductor package with enhancing layer and method for manufacturing the same

摘要：

A semiconductor package with an enhancing layer is provided. The package includes a leadframe, a chip, several bumps and an enhancing layer. The leadframe includes several leads. Several bonding pads are disposed on a surface of the chip. The bumps connect the bonding pads of the chip and the leads of the leadframe. The enhancing layer covers the leads and the bumps. The enhancing layer including copper is formed by electroplating. Or, the melting point of the enhancing layer is greater than the melting points of lead and tin.

摘要（中）：

提供了具有增强层的半导体封装。封装包括引线框架，芯片，几个凸块和增强层。引线框架包括多个引线。在芯片的表面上设置多个焊盘。凸块连接芯片的焊盘和引线框的引线。增强层覆盖引线和凸块。包括铜的增强层通过电镀形成。或者，增强层的熔点大于铅和锡的熔点。

信息查询

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/02	.容器；封接（H01L23/12，H01L23/34，H01L23/48，H01L23/552优先）