发明申请
- 专利标题: Semiconductor device and method for forming the same
- 专利标题(中): 半导体装置及其形成方法
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申请号: US11390796申请日: 2006-03-27
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公开(公告)号: US20070221967A1公开(公告)日: 2007-09-27
- 发明人: Vishnu Khemka , Amitava Bose , Todd Roggenbauer , Ronghua Zhu
- 申请人: Vishnu Khemka , Amitava Bose , Todd Roggenbauer , Ronghua Zhu
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the semiconductor substrate may have a plurality of first and second portions (44, 54). The first portions (44) may have a first thickness, and the second portions (54) may have a second thickness. The first semiconductor region may have a second dopant type. A plurality of second semiconductor regions (42) within the semiconductor substrate may each be positioned at least one of directly below and directly above a respective one of the first portions (44) of the first semiconductor region and laterally between a respective pair of the second portions (54) of the first semiconductor region. A third semiconductor region (56) within the semiconductor substrate may have the first dopant type. A gate electrode (64) may be over at least a portion of the first semiconductor region and at least a portion of the third semiconductor region (56).
公开/授权文献
- US07550804B2 Semiconductor device and method for forming the same 公开/授权日:2009-06-23