发明申请
- 专利标题: Memory device using quantum dots
- 专利标题(中): 使用量子点的存储器件
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申请号: US11230530申请日: 2005-09-21
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公开(公告)号: US20070221986A1公开(公告)日: 2007-09-27
- 发明人: Yoon Kang , Sang Lee , Won Joo
- 申请人: Yoon Kang , Sang Lee , Won Joo
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR2004-111925 20041224
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
A memory device, which includes a memory layer having quantum dots uniformly dispersed in organic material disposed between an upper electrode layer and a lower electrode layer. The memory device is advantageous because it is nonvolatile and inexpensive, and realizes high integration and high speed switching. Further, size and distribution of the quantum dots may be uniform, thus realizing uniform memory behavior. Furthermore, the memory device is suitable for application to portable electronic devices that must have low power consumption, due to low operating voltages thereof.
公开/授权文献
- US07491968B2 Memory device using quantum dots 公开/授权日:2009-02-17