This disclosure concerns a memory including a memory cell including a floating body in an electrically floating state and storing data according to the number of majority carriers in the floating body; a word line connected to a gate of the memory cell; a first bit line connected to the memory cell to transmit the data; a second bit line transmitting reference data used to detect the data stored in the memory cell; a first sense node and a second sense node transmitting the data stored in the memory cell and the reference data, respectively; a first short-circuiting switch provided between the first sense node and the second sense node; and a first flip-flop applying a load current to the memory cell during a data read operation and amplifying a potential difference generated between the first sense node and the second sense node by turning off the first short-circuiting switch