Invention Application
- Patent Title: Laterally Implanted Electroabsorption Modulated Laser
- Patent Title (中): 侧向植入电吸收调制激光
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Application No.: US11569385Application Date: 2005-05-20
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Publication No.: US20070223543A1Publication Date: 2007-09-27
- Inventor: Kelvin Prosyk , Joan Haysom
- Applicant: Kelvin Prosyk , Joan Haysom
- Priority: GB0424253.3 20041102
- International Application: PCT/CA05/00781 WO 20050520
- Main IPC: H01S5/026
- IPC: H01S5/026 ; G02F1/015

Abstract:
A monolithically integrated electroabsorption modulated laser having a ridge waveguide structure, has lateral ion implantation. The integrated device has a laser section and a modulator section. The modulator section has ion implanted regions adjacent to the waveguide ridge. The implanted regions penetrate through the top cladding layer to reduce capacitance within the intrinsic active core of the reverse biased modulator and allow a shallow etched ridge waveguide structure to be used for the modulator. The device provides good optical coupling, efficient manufacturing, and good high power performance.
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