Invention Application
US20070223543A1 Laterally Implanted Electroabsorption Modulated Laser 审中-公开
侧向植入电吸收调制激光

  • Patent Title: Laterally Implanted Electroabsorption Modulated Laser
  • Patent Title (中): 侧向植入电吸收调制激光
  • Application No.: US11569385
    Application Date: 2005-05-20
  • Publication No.: US20070223543A1
    Publication Date: 2007-09-27
  • Inventor: Kelvin ProsykJoan Haysom
  • Applicant: Kelvin ProsykJoan Haysom
  • Priority: GB0424253.3 20041102
  • International Application: PCT/CA05/00781 WO 20050520
  • Main IPC: H01S5/026
  • IPC: H01S5/026 G02F1/015
Laterally Implanted Electroabsorption Modulated Laser
Abstract:
A monolithically integrated electroabsorption modulated laser having a ridge waveguide structure, has lateral ion implantation. The integrated device has a laser section and a modulator section. The modulator section has ion implanted regions adjacent to the waveguide ridge. The implanted regions penetrate through the top cladding layer to reduce capacitance within the intrinsic active core of the reverse biased modulator and allow a shallow etched ridge waveguide structure to be used for the modulator. The device provides good optical coupling, efficient manufacturing, and good high power performance.
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