发明申请
- 专利标题： Method of producing SIMOX wafer
- 专利标题（中）： 生产SIMOX晶圆的方法
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申请号： US11729292申请日： 2007-03-27
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公开(公告)号： US20070224774A1公开(公告)日： 2007-09-27
- 发明人: Yoshio Murakami , Riyuusuke Kasamatsu , Yoshiro Aoki
- 申请人： Yoshio Murakami , Riyuusuke Kasamatsu , Yoshiro Aoki
- 申请人地址： JP Tokyo
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-86009 20060327
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or N2 atmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.
公开/授权文献
- US07550371B2 Method of producing SIMOX wafer 公开/授权日：2009-06-23
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