发明申请
- 专利标题: PLASMA PROCESSING APPARATUS
- 专利标题(中): 等离子体加工设备
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申请号: US11756097申请日: 2007-05-31
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公开(公告)号: US20070236148A1公开(公告)日: 2007-10-11
- 发明人: Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
- 申请人: Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
- 优先权: JP2002-204928 20020712; JP2003-060670 20030306
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065
摘要:
An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
公开/授权文献
- US08251011B2 Plasma processing apparatus 公开/授权日:2012-08-28