发明申请
- 专利标题： METHOD FOR FABRICATING A TRANSFORMER INTEGRATED WITH A SEMICONDUCTOR STRUCTURE
- 专利标题（中）： 一种用半导体结构集成的变压器的方法
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申请号： US11736565申请日： 2007-04-17
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公开(公告)号： US20070236320A1公开(公告)日： 2007-10-11
- 发明人: Cheng-Chou Hung , Hua-Chou Tseng , Victor-Chiang Liang , Yu-Chia Chen , Tsun-Lai Hsu
- 申请人： Cheng-Chou Hung , Hua-Chou Tseng , Victor-Chiang Liang , Yu-Chia Chen , Tsun-Lai Hsu
- 主分类号： H01F5/00
- IPC分类号： H01F5/00
摘要：
A substrate is provided and a top interconnection metal layer and a primary winding layer are formed thereon. Then a passivation layer having a plurality of via exposed parts of the top interconnection metal layer is formed on the substrate. A secondary winding layer and at least a bonding pad are formed on the passivation layer. The bonding pad electrically connects to the top interconnection metal layer through the via.
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