发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF
- 专利标题（中）： 半导体结构及其制造方法
-
申请号： US11755669申请日： 2007-05-30
-
公开(公告)号： US20070238241A1公开(公告)日： 2007-10-11
- 发明人: Shyh-Fann Ting , Cheng-Tung Huang , Wen-Han Hung , Li-Shian Jeng , Kun-Hsien Lee , Tzyy-Ming Cheng , Jing-Chang Wu , Tzermin Shen
- 申请人： Shyh-Fann Ting , Cheng-Tung Huang , Wen-Han Hung , Li-Shian Jeng , Kun-Hsien Lee , Tzyy-Ming Cheng , Jing-Chang Wu , Tzermin Shen
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor structure is disclosed, including a substrate having therein a first well of a first conductivity type and a second well of a second conductivity type, a first MOS transistor of the first conductivity type and a second MOS transistor of the second conductivity type. The first MOS transistor is disposed on the second well, including a gate structure on the second well and a strained layer of the first conductivity type in an opening in the second well beside the gate structure. The difference between the cell parameter of a portion of the strained layer near the bottom of the opening and that of the substrate is less than the difference between the cell parameter of a portion of the strained layer apart from the bottom of the opening and that of the substrate. The second MOS transistor is disposed on the first well.
公开/授权文献
- US07524716B2 Fabricating method of semiconductor structure 公开/授权日：2009-04-28
信息查询
IPC分类:
