发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
- 专利标题（中）： 半导体器件制造方法和半导体制造设备
-
申请号： US11762033申请日： 2007-06-12
-
公开(公告)号： US20070238292A1公开(公告)日： 2007-10-11
- 发明人: Norikazu MIZUNO , Kiyohiko MAEDA
- 申请人： Norikazu MIZUNO , Kiyohiko MAEDA
- 申请人地址： JP TOKYO
- 专利权人： KOKUSAI ELECTRIC CO., LTD.
- 当前专利权人： KOKUSAI ELECTRIC CO., LTD.
- 当前专利权人地址： JP TOKYO
- 优先权： JP11-333129 19991124
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF3 gas flowing into the reaction container.
公开/授权文献
信息查询
IPC分类:
