发明申请
- 专利标题: RADIATION DETECTOR WITH AN EPITAXIALLY GROWN SEMICONDUCTOR BODY
- 专利标题(中): 具有外延半导体器件的辐射探测器
-
申请号: US11240987申请日: 2005-09-29
-
公开(公告)号: US20070241260A1公开(公告)日: 2007-10-18
- 发明人: Arndt Jaeger , Peter Stauss
- 申请人: Arndt Jaeger , Peter Stauss
- 申请人地址: DE Regensburg
- 专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 优先权: DE102004047645.4 20040930; DE102005001280.9 20050111
- 主分类号: H01L31/00
- IPC分类号: H01L31/00
摘要:
A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.
公开/授权文献
信息查询
IPC分类: