发明申请
- 专利标题： Semiconductor light-emitting device and method of fabricating the same
- 专利标题（中）： 半导体发光器件及其制造方法
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申请号： US11785024申请日： 2007-04-13
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公开(公告)号： US20070241345A1公开(公告)日： 2007-10-18
- 发明人: Kuo-Hsin Huang
- 申请人： Kuo-Hsin Huang
- 专利权人： HIGH POWER OPTOELECTRONICS, INC.
- 当前专利权人： HIGH POWER OPTOELECTRONICS, INC.
- 优先权： TW095113266 20060414
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L23/48 ; H01L31/12 ; H01L21/00
摘要：
The present invention provides a semiconductor light emitting device which includes a multi-layer structure. Additionally, an electrode is disposed on a first surface of the multi-layer structure. Furthermore, the electrode includes a plurality of bonding pads.
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