发明申请
US20070241455A1 Method for forming dual damascenes with supercritical fluid treatments
有权
用超临界流体处理形成双重大马士革的方法
- 专利标题: Method for forming dual damascenes with supercritical fluid treatments
- 专利标题(中): 用超临界流体处理形成双重大马士革的方法
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申请号: US11240965申请日: 2005-09-30
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公开(公告)号: US20070241455A1公开(公告)日: 2007-10-18
- 发明人: Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
- 申请人: Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
- 专利权人: Taiwan Semiconductor manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor manufacturing Co., Ltd.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.