发明申请
US20070246788A1 N-well barrier pixels for improved protection of dark reference columns and rows from blooming and crosstalk
审中-公开
N阱势垒像素，用于改善暗参考柱和行的防范和串扰的保护
- 专利标题： N-well barrier pixels for improved protection of dark reference columns and rows from blooming and crosstalk
- 专利标题（中）： N阱势垒像素，用于改善暗参考柱和行的防范和串扰的保护
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申请号： US11408194申请日： 2006-04-21
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公开(公告)号： US20070246788A1公开(公告)日： 2007-10-25
- 发明人: Richard Mauritzson , Inna Patrick
- 申请人： Richard Mauritzson , Inna Patrick
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; H01L21/00
摘要：
The barrier region for isolating one or more dark regions of the pixel array of an image sensor from the active array or from the peripheral circuitry includes N-well pixel isolation region. The N-well pixel isolation region includes at least one N-well implant or at least one N-well stripe. The N-well pixel isolation region is adjacent the pixel cells which comprise the dark region. The addition of the N-well in the barrier region improves the isolation properties of the barrier region by reducing or eliminating the neutral P− EPI region in the barrier pixel area below the N-well isolation region.
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