发明申请
- 专利标题： Semiconductor device and method for producing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11820917申请日： 2007-06-21
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公开(公告)号： US20070246829A1公开(公告)日： 2007-10-25
- 发明人: Keiji Yamane , Tetsuo Ueda , Takashi Miyamoto , Isao Kidoguchi
- 申请人： Keiji Yamane , Tetsuo Ueda , Takashi Miyamoto , Isao Kidoguchi
- 申请人地址： JP Kadoma-shi 571-8501
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Kadoma-shi 571-8501
- 优先权： JP2003-108285 20030411
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
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