发明申请
- 专利标题: Static random access memory cell with improved stability
- 专利标题(中): 静态随机存取存储单元具有改进的稳定性
-
申请号: US11409858申请日: 2006-04-24
-
公开(公告)号: US20070247896A1公开(公告)日: 2007-10-25
- 发明人: Azeez Bhavnagarwala , Stephen Kosonocky , Sampath Purushothaman , Kenneth Rodbell
- 申请人: Azeez Bhavnagarwala , Stephen Kosonocky , Sampath Purushothaman , Kenneth Rodbell
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse.
公开/授权文献
- US07397691B2 Static random access memory cell with improved stability 公开/授权日:2008-07-08