发明申请
US20070247917A1 Method for programming a memory device suitable to minimize floating gate coupling and memory device 有权
用于编程适于最小化浮动栅极耦合和存储器件的存储器件的方法

Method for programming a memory device suitable to minimize floating gate coupling and memory device
摘要:
Embodiment of a method for programming a memory device of the type comprising a matrix of memory cells divided in buffers of cells capacitively uncoupled from each other, the method comprising: first programming of said cells belonging to a buffer; second programming of said cells belonging to said buffer; said step of first programming occurs with a ramp gate voltage having first pitch and programs said cells of said buffer with higher threshold distribution and said step of second programming occurs with a ramp gate voltage having pitch lower than the pitch.
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