发明申请
US20070249255A1 Method for manufacturing an electron-emitting device with first and second carbon films
审中-公开
用于制造具有第一和第二碳膜的电子发射器件的方法
- 专利标题： Method for manufacturing an electron-emitting device with first and second carbon films
- 专利标题（中）： 用于制造具有第一和第二碳膜的电子发射器件的方法
-
申请号： US11754487申请日： 2007-05-29
-
公开(公告)号： US20070249255A1公开(公告)日： 2007-10-25
- 发明人: Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
- 申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
- 申请人地址： JP TOKYO
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP TOKYO
- 优先权： JP6-226115 19940829; JP6-336626 19941226; JP6-336712 19941226; JP6-336713 19941226; JP7-87759 19950322; JP7-182049 19950626
- 主分类号： H01J9/00
- IPC分类号： H01J9/00
摘要：
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
信息查询
