发明申请
US20070252196A1 Vertical channel transistors and memory devices including vertical channel transistors
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垂直沟道晶体管和包括垂直沟道晶体管的存储器件
- 专利标题： Vertical channel transistors and memory devices including vertical channel transistors
- 专利标题（中）： 垂直沟道晶体管和包括垂直沟道晶体管的存储器件
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申请号： US11801915申请日： 2007-02-08
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公开(公告)号： US20070252196A1公开(公告)日： 2007-11-01
- 发明人: Jin-Young Kim , Ki-Whan Song
- 申请人： Jin-Young Kim , Ki-Whan Song
- 优先权： KR10-2006-0017902 20060223
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/78 ; H01L31/00 ; H01L29/94
摘要：
A semiconductor device is provided which includes an NMOS vertical channel transistor located on a substrate and including a p+ polysilicon gate electrode surrounding a vertical p-channel region, and a PMOS vertical channel transistor located on the substrate and including an n+ polysilicon gate electrode surrounding a vertical n-channel region. The NMOS and PMOS vertical channel transistors are optionally operable in a CMOS operational mode.
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