发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11785845申请日: 2007-04-20
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公开(公告)号: US20070252242A1公开(公告)日: 2007-11-01
- 发明人: Takeshi Matsumoto
- 申请人: Takeshi Matsumoto
- 申请人地址: JP Kadoma-shi
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Kadoma-shi
- 优先权: JP2006-127168 20060501
- 主分类号: H01L23/544
- IPC分类号: H01L23/544
摘要:
An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu.
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