发明申请
US20070252242A1 Semiconductor device 审中-公开
半导体器件

Semiconductor device
摘要:
An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu.
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