发明申请
US20070254401A1 Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
审中-公开
III族氮化物晶体和III族氮化物晶体衬底的表面处理方法
- 专利标题： Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
- 专利标题（中）： III族氮化物晶体和III族氮化物晶体衬底的表面处理方法
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申请号： US11797131申请日： 2007-05-01
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公开(公告)号： US20070254401A1公开(公告)日： 2007-11-01
- 发明人: Takayuki Nishiura , Keiji Ishibashi
- 申请人： Takayuki Nishiura , Keiji Ishibashi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 优先权： JP2006-127443(P) 20060501
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/00 ; H01L21/302
摘要：
There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.