发明申请
- 专利标题: Method for introducing impurities and apparatus for introducing impurities
- 专利标题(中): 引入杂质的方法和引入杂质的装置
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申请号: US11819567申请日: 2007-06-28
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公开(公告)号: US20070254460A1公开(公告)日: 2007-11-01
- 发明人: Yuichiro Sasaki , Bunji Mizuno , Cheng-Guo Jin
- 申请人: Yuichiro Sasaki , Bunji Mizuno , Cheng-Guo Jin
- 申请人地址: JP Osaka
- 专利权人: MATSUSHIDA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: MATSUSHIDA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: JP Osaka
- 优先权: JP2003-041123 20030219
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.