发明申请
- 专利标题： CIRCUIT STRUCTURE WITH A DOUBLE-GATE ORGANIC THIN FILM TRANSISTOR DEVICE AND APPLICATION THEREOF
- 专利标题（中）： 具有双门有机薄膜晶体管器件的电路结构及其应用
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申请号： US11459013申请日： 2006-07-20
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公开(公告)号： US20070257252A1公开(公告)日： 2007-11-08
- 发明人: Yu-Wu Wang , Yi-Kai Wang , Chen-Pang Kung , Chih-Wen Hsiao
- 申请人： Yu-Wu Wang , Yi-Kai Wang , Chen-Pang Kung , Chih-Wen Hsiao
- 申请人地址： TW Hsin Chu Hsien
- 专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址： TW Hsin Chu Hsien
- 优先权： TW95115690 20060503
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L35/24 ; H01L51/00
摘要：
This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.