发明申请
US20070257315A1 Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors
审中-公开
离子注入与原位或非原位热处理相结合,用于改进的场效应晶体管
- 专利标题: Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors
- 专利标题(中): 离子注入与原位或非原位热处理相结合,用于改进的场效应晶体管
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申请号: US11417846申请日: 2006-05-04
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公开(公告)号: US20070257315A1公开(公告)日: 2007-11-08
- 发明人: Stephen Bedell , Joel De Souza , Zhibin Ren , Alexander Reznicek , Devendra Sadana , Katherine Saenger , Ghavam Shahidi
- 申请人: Stephen Bedell , Joel De Souza , Zhibin Ren , Alexander Reznicek , Devendra Sadana , Katherine Saenger , Ghavam Shahidi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
This invention teaches methods of combining ion implantation steps with in situ or ex situ heat treatments to avoid and/or minimize implant-induced amorphization (a potential problem for source/drain (S/D) regions in FETs in ultrathin silicon on insulator layers) and implant-induced plastic relaxation of strained S/D regions (a potential problem for strained channel FETs in which the channel strain is provided by embedded S/D regions lattice mismatched with an underlying substrate layer). In a first embodiment, ion implantation is combined with in situ heat treatment by performing the ion implantation at elevated temperature. In a second embodiment, ion implantation is combined with ex situ heat treatments in a “divided-dose-anneal-in-between” (DDAB) scheme that avoids the need for tooling capable of performing hot implants.