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发明申请
US20070257324A1 Semiconductor Devices Having Gate Structures and Contact Pads that are Lower than the Gate Structures 失效
具有栅极结构和低于栅极结构的接触焊盘的半导体器件

Semiconductor Devices Having Gate Structures and Contact Pads that are Lower than the Gate Structures
摘要：
Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.
摘要（中）：

半导体器件在半导体衬底上具有栅极结构，在相应栅极结构的侧壁上具有第一间隔物。 第一接触垫位于栅极结构之间并且具有低于栅极结构的高度的高度。 第二间隔件设置在第一间隔件的侧壁和第一接触垫的暴露的侧壁上。 第二接触垫设置在第一接触垫上。

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