发明申请
US20070259131A1 Plasma-Assisted Deposition Method and System for Carrying Out the Same
审中-公开
等离子辅助沉积方法及其执行系统
- 专利标题： Plasma-Assisted Deposition Method and System for Carrying Out the Same
- 专利标题（中）： 等离子辅助沉积方法及其执行系统
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申请号： US11660649申请日： 2006-08-25
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公开(公告)号： US20070259131A1公开(公告)日： 2007-11-08
- 发明人: Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Ryuichiro Isaki , Manabu Shinriki
- 申请人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Ryuichiro Isaki , Manabu Shinriki
- 优先权： JP2004-245700 20040825; JP2005-225717 20050803
- 国际申请： PCT/JP05/15407 WO 20060825
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/31 ; H01L21/768
摘要：
A fluorine-containing carbon film excellent in heat stability is formed by using C5F8 gas having a moisture content of 60×10−9 volume ratio or below. A purifier 2 packed with particles having hydrophilic or reducing surface layers is placed in a gas supply line connecting a process gas source 1 for supplying C5F8 gas and a film deposition unit 3 for depositing a fluorine-containing carbon film on a substrate by using a plasma produced by ionizing C5F8 gas. C5F8 gas is passed through the purifier 2 to remove moisture from the C5F8 gas. The C5F8 gas supplied to the film deposition unit 3 to deposit a fluorine-containing carbon film has a moisture content on the order of 20×10−9 volume ratio. A fluorine-containing carbon film thus deposited contains a very small amount of moisture. Consequently, desorption of fluorine due to moisture contained in the fluorine-containing carbon film when the fluorine-containing carbon film is heated by a subsequent heating process is not likely to occur and the fluorine-containing carbon film has high heat stability.
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