发明申请
- 专利标题: ELECTRON MICROSCOPE, METHODS TO DETERMINE THE CONTACT POINT AND THE CONTACT OF THE PROBE
- 专利标题(中): 电子显微镜,确定接触点和探头接触的方法
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申请号: US11459359申请日: 2006-07-23
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公开(公告)号: US20070262254A1公开(公告)日: 2007-11-15
- 发明人: Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
- 申请人: Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
- 申请人地址: TW Taoyuan
- 专利权人: NATIONAL CENTRAL UNIVERSITY
- 当前专利权人: NATIONAL CENTRAL UNIVERSITY
- 当前专利权人地址: TW Taoyuan
- 优先权: TW95116721 20060511
- 主分类号: H01J37/26
- IPC分类号: H01J37/26
摘要:
An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.
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