The disclosed subject matter relates to a light emitting semiconductor apparatus with reduced color unevenness and suppressed topical deterioration over time with regard to an amount and chromaticity of the illuminating light. The light emitting semiconductor apparatus of the disclosed subject matter can include three separate bonding pads. Among those, the centrally located bonding pad is die bonded to two types of light emitting devices which have an identical material and structure and almost equal sizes, but are different in orientation and direction characteristic of PN-electrodes. The bonding pad located in an outermost location is die-bonded to the light emitting device. In this case, the direction characteristic of a central light emitting device exhibits a substantial reverse conical form while the direction characteristic of the light emitting device exhibits a substantial conical form. The light emitting device mounted on the central bonding pad and the light emitting device mounted on the outermost bonding pad can have respective electrodes on the wire bonding side which are stitch-bonded to bonding wires.