发明申请
US20070263327A1 GMR SENSOR HAVING AN UNDER-LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE
失效
具有用于增加磁阻的氮处理的下层的GMR传感器
- 专利标题: GMR SENSOR HAVING AN UNDER-LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE
- 专利标题(中): 具有用于增加磁阻的氮处理的下层的GMR传感器
-
申请号: US11769519申请日: 2007-06-27
-
公开(公告)号: US20070263327A1公开(公告)日: 2007-11-15
- 发明人: Wen-yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
- 申请人: Wen-yaung Lee , Thomas Shatz , Dulip Welipitiya , Brian York
- 专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES
- 当前专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/33
摘要:
A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than or monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.
公开/授权文献
信息查询
IPC分类: