Invention Application
US20070264844A1 Method of hiding transparent electrodes on a transparent substrate 有权
在透明基板上隐藏透明电极的方法

  • Patent Title: Method of hiding transparent electrodes on a transparent substrate
  • Patent Title (中): 在透明基板上隐藏透明电极的方法
  • Application No.: US11501805
    Application Date: 2006-08-10
  • Publication No.: US20070264844A1
    Publication Date: 2007-11-15
  • Inventor: Chun-Min Hu
  • Applicant: Chun-Min Hu
  • Applicant Address: TW Chung He City
  • Assignee: TrendON Touch Technology Corp.
  • Current Assignee: TrendON Touch Technology Corp.
  • Current Assignee Address: TW Chung He City
  • Priority: TW095116533 20060510
  • Main IPC: H01L21/469
  • IPC: H01L21/469
Method of hiding transparent electrodes on a transparent substrate
Abstract:
A method of hiding transparent electrodes on a transparent substrate coats a solution of non-conductive nanoparticles onto the transparent substrate and the transparent electrodes after forming a plurality of transparent electrodes on the transparent substrate, and both non-conductive nanoparticles and transparent electrodes have the same reflective index of light. After a high-temperature thermal processing is performed to the transparent substrate, an even mask is formed on the transparent substrate and the transparent electrodes, such that the non-conductive nanoparticles in the mask provide the same reflective index of light for the positions of the transparent substrate with and without the transparent electrodes, so as to effectively prevent a different reflective index of light at any position of the transparent substrate that will cause a poor image quality of the screen.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06,H01L21/16及H01L21/18各组不包含的或有或无杂质,例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/44)
H01L21/461 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/469 ......在半导体材料上形成绝缘层的,例如,用于掩膜的或应用光刻技术的(密封层入H01L21/56)以及这些层的后处理
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